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atomic email studio 8.40.0.1210 serial1. Field of the Invention
The present invention relates to the field of power supply voltage monitoring circuits, and more particularly to a voltage monitoring circuit capable of dynamically changing detection reference voltages in accordance with the amplitude and/or pulse width of the power supply voltage.
2. Description of the Related Art
Among various types of memories, static random access memories (SRAMs) are widely used in computer systems. SRAMs are common in inexpensive computer systems because of their high speed and low power consumption, but have less endurance for threshold voltage variations (VT) between memory transistors. As the demand for high endurance SRAMs increases, voltage level monitoring circuits are required to monitor the supply voltage levels and adjust the detection reference voltage level(s) dynamically.
FIG. 1 is a schematic diagram of a conventional memory circuit 100. The memory circuit 100 comprises a voltage level monitoring circuit 101, a latch 102, a precharge circuit 103, a data output line 104, and a data input line 105.
The latch 102 has a true data input terminal T, a complement data input terminal C, a latch output terminal Q, and a complementary output terminal Q_C. The monitoring circuit 101 has a voltage switch SW
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